PART |
Description |
Maker |
CY7C1351G-100AXC CY7C1351G-100AXI CY7C1351G-100BGC |
4-Mbit (128K x 36) Flow-through SRAM with NoBL Architecture 4-Mbit (128K x 36) Flow-through SRAM with NoBL?/a> Architecture 4-Mbit (128K x 36) Flow-through SRAM with NoBL⑩ Architecture
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Cypress Semiconductor
|
UPD4264405G5-A50-7JD UPD4265405G5-A50-7JD UPD42S65 |
2-Mbit (128K x 18) Flow-Through SRAM with NoBL Architecture x4 EDO Page Mode DRAM 512K (32K x 16) Static RAM 36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 128K x 8 Static RAM 128K的8静态RAM
|
Omron Electronics, LLC
|
CY7C1351G-133BGC CY7C1351G-133AXC CY7C1351G-133AXI |
4-Mbit (128K x 36) Flow-through SRAM with NoBLArchitecture 128K X 36 ZBT SRAM, 8 ns, PBGA119
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
CY7C1351G-100AXC |
4-Mbit (128K x 36) Flow-through SRAM with NoBL(TM) Architecture
|
Cypress
|
CY7C1471V25-100AXC CY7C1473V25-100AXI CY7C1473V25- |
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 8.5 ns, PQFP100 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 6.5 ns, PBGA165 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
|
Cypress Semiconductor, Corp.
|
CY7C1347F-166AC CY7C1347F-166AI CY7C1347F-166BGC C |
4-Mbit (128K x 36) Pipelined Sync SRAM 128K X 36 CACHE SRAM, 4 ns, PBGA165 4-Mbit (128K x 36) Pipelined Sync SRAM 128K X 36 CACHE SRAM, 4 ns, PBGA119 4-Mbit (128K x 36) Pipelined Sync SRAM 128K X 36 CACHE SRAM, 3.5 ns, PBGA119 4-Mbit (128K x 36) Pipelined Sync SRAM 128K X 36 CACHE SRAM, 3.5 ns, PQFP100 4-Mbit (128K x 36) Pipelined Sync SRAM 128K X 36 CACHE SRAM, 2.8 ns, PBGA119 4-Mbit (128K x 36) Pipelined Sync SRAM 4兆位28K的36)流水线同步静态存储器
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
E28F002BX-B80 E28F002BX-T60 E28F002BX-T80 E28F002B |
5V or Adjustable, Low-Voltage, Step-Up DC-DC Controller 28F200BX - B 2兆位28K的1656K × 8)启动块闪存系列 ACTUATOR, SWITCH, ROUND, LATCH; Approval Bodies:BEAB, VDE, UL, CSA; Diameter, external:29mm; IP rating:65; Operations, mechanical No. of:100000; Temp, op. max:85(degree C); Temp, op. min:-20(degree C) RoHS Compliant: Yes 28F002BX-B - 2-MBIT (128K x 16. 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY 2-MBIT (128K x 16 / 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY 2-MBIT (128K x 16/ 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
|
http:// Intel, Corp. PROM Intel Corp. Intel Corporation
|
IS61NF25618-10BI IS61NF25618-8.5TQ IS61NF25618-8.5 |
128K x 32, 128K x 36 and 256K x 18 FLOW-THROUGH NO WAIT STATE BUS SRAM
|
Integrated Silicon Solution, Inc Integrated Silicon Solu...
|
IDT71V3557S75PF IDT71V3557S85PF IDT71V3557S80PF ID |
128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs 128K的3656 × 18.3V的同步ZBT SRAM.3V的I / O的脉冲计数器,流量,通过输出 128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs 128K X 36 ZBT SRAM, 7.5 ns, PBGA119
|
Integrated Device Technology, Inc. INTEGRATED DEVICE TECHNOLOGY INC
|
M27C202-80F1 M27C202-70K6 M27C202-120F6 M27C202-90 |
128K X 16 OTPROM, 80 ns, PDSO40 128K X 16 OTPROM, 90 ns, PQCC44 128K X 16 UVPROM, 100 ns, CDIP40 2 MBIT (128KB X16) UV EPROM AND OTP EPROM
|
STMICROELECTRONICS ST Microelectronics
|
CY7C1373D-133AXC CY7C1373D ICY7C1373D-100BGXI CY7C |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL(TM) Architecture 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture
|
CYPRESS[Cypress Semiconductor]
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